2013. 8. 27 1/7 semiconductor technical data KGT25N120NDH revision no : 1 general description kec npt igbts offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such as ih(induction heating), microwave oven, etc. features h high speed switching h high ruggedness, temperature stable behavior h soft current turn-off waveforms h extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature characteristic symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges ? 20 v collector current @tc=25 ? i c 50 a @tc=100 ? 25 a pulsed collector current i cm * 90 a diode continuous forward current @tc=100 ? i f 25 a diode maximum forward current i fm 150 a maximum power dissipation @tc=25 ? p d 220 w @tc=100 ? 87 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r thjc 0.57 ? /w thermal resistance, junction to case (diode) r thjc 2.0 ? /w thermal resistance, junction to ambient r t h ja 40 ? /w thermal characteristic e c g downloaded from: http:///
2013. 8. 27 2/7 KGT25N120NDH revision no : 1 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1ma 1200 - - v collector cut-off current i ces v ge =0v, v ce =1200v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ? 20v - - ? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =25ma 4.5 6.0 7.5 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =25a - 1.85 2.25 v v ge =15v, i c =25a, t c = 125 ? - 2.15 - v v ge =15v, i c =50a - 2.40 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 25a - 150 - nc gate-emitter charge q ge - 20 - nc gate-collector charge q gc - 70 - nc turn-on delay time t d(on) v cc =600v, i c =25a, v ge =15v,r g =10 ? inductive load, t c = 25 ? - 40 - ns rise time t r - 25 - ns turn-off delay time t d(off) - 200 - ns fall time t f - 150 - ns turn-on switching loss e on - 3.5 - mj turn-off switching loss e off - 1.2 - mj total switching loss e ts - 4.7 - mj turn-on delay time t d(on) v cc =600v, i c =25a, v ge =15v, r g =10 ? inductive load, t c = 125 ? - 45 - ns rise time t r - 30 - ns turn-off delay time t d(off) - 210 - ns fall time t f - 220 - ns turn-on switching loss e on - 4.0 - mj turn-off switching loss e off - 2.0 - mj total switching loss e ts - 6.0 - mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 2500 - pf ouput capacitance c oes - 100 - pf reverse transfer capacitance c res - 70 - pf marking downloaded from: http:///
2013. 8. 27 3/7 KGT25N120NDH revision no : 1 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 25a t c =25 ? - 1.8 2.5 v t c =125 ? - 1.9 - diode reverse recovery time t rr i f = 25a di/dt = 200a/ s t c =25 ? - 230 330 ns t c =125 ? - 300 - diode peak reverse recovery current i rr t c =25 ? - 27 35 a t c =125 ? - 31 - diode reverse recovery charge q rr t c =25 ? - 3100 4700 nc t c =125 ? - 4650 - downloaded from: http:///
2013. 8. 27 4/7 KGT25N120NDH revision no : 1 downloaded from: http:///
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2013. 8. 27 6/7 KGT25N120NDH revision no : 1 downloaded from: http:///
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